Fact.MR has published a new research report titled "SiC & GaN Power Semiconductor Market Industry Development Scenario and Leading Growth Factors till 2026" to its online database that tries to unveil the various scenarios prevailing in the SiC & GaN Power Semiconductor Market. This assessment delivers a smart compilation of primary and secondary data which provides a clear insight about the future plans expected to impact the SiC & GaN Power Semiconductor Market. This study comprises of prominent data which makes it a beneficial source for investors, analysts and industry experts to acquire necessary knowledge associated to the fundamental market trends, opportunities and growth drivers during the stated forecast by 2026.
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The report commences with introducing the current market scenario for SiC & GaN power semiconductor. The executive summary section of the report offers insights to users regarding the future scope of the global SiC & GaN power semiconductor market. Brief information on the crucial aspects, statistics and facts on the global SiC & GaN power semiconductor keyword market is highlighted in this section.
The next section offers an overview of the global SiC & GaN power semiconductor market. This section includes definition of the product – SiC & GaN power semiconductor, along with insights on dynamics contributing towards growth of the market. The overview also throws light on year-on-year growth and market value defining the future progress and decline of the global SiC & GaN power semiconductor. Statistics on the year-on-year growth provides readers with a broader view on expected progress patterns reshaping growth over the forecast period.
In the succeeding section, the report offers insights on major trends, retrains and drivers from demand, supply and macro-economic perspectives. The report also focuses on impact analysis of key drivers and restraints that offers better decision-making insights to clients.
The report further provides the readers with information on the leading technology and advancements traced in the global SiC & GaN power semiconductor market. Up-to-date information and latest advancements regarding growth opportunities can benefit the leading manufacturers of SiC & GaN power semiconductor. With continuous evolution and advancements in technology, tracking the latest trends and developments is fundamental for SiC & GaN power semiconductor manufacturers to formulate key business strategies. Detailed insights regarding the supply chain, list of distributors, raw material sourcing, cost structure, and pricing analysis are provided in this section.
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On the basis of components, discrete SiC power devices are likely to gain traction in the market from 2017 to 2026. Discrete SiC power devices are estimated to surpass US$ 1,900 million revenue towards 2026 end. Meanwhile, SiC power modules are also likely to achieve strong growth through 2026. SiC power devices is emerging as the most viable option for next-generation semiconductor elements due to its high frequency, high voltage performance and high temperature.
SiC & GaN power semiconductor is likely to find the largest application in Power supplies between 2017 and 2026. Power supplies are estimated to create an incremental opportunity above US$ 700 million between the forecast period from 2017 to 2026. Increasing demand renewable energy is resulting in the development of power semiconductor devices. Moreover, Silicon Carbide and Gallium Nitride are considered suitable for power semiconductor devices as it helps in reducing on-state resistance and miniaturizing the size of power devices.
The report also profiles companies that are expected to remain active in the expansion of global SiC & GaN power semiconductor market through 2026, which include VisIC Technologies Ltd, Panasonic Corporation, NXP Semiconductors N.V., GaN Systems Inc., Exagan S.A.S, Cambridge Electronics, Avogy, Inc., Vincotech GmbH, United Silicon Carbide Inc., STMicroelectronics N.V., Raytheon Company, Monolith Semiconductor Inc., Genesic semiconductor Inc., Transform, Inc., Alpha & Omega Semiconductor, Renesas Electronics, SEMIKRON International GmbH, Danfoss A/S, Microsemi Corporation, Wolfspeed, Inc., ROHM Semiconductor, Global Power Technologies Group, Fuji Electric Systems Co., Ltd, Fairchild Semiconductor, and Infineon Technologies.
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